Electrical properties and I–V characteristics of 5,14-dihydro-5,7,12,14-tetraazapentacene doped Schottky barrier diode

محورهای موضوعی : Journal of Theoretical and Applied Physics

Hassan Ghalami Bavil Olyaee ¹ , Peter J. S. Foot ² , Vincent Montgomery ³

1 - Islamic Azad University-South Tehran Branch
2 - Kingston University London
3 - Kingston University London

تاریخ پذیرش : 1394/09/10 تاریخ انتشار : 1394/09/10

کلید واژه: Schottky diodes, 5, 14, dihydro, 7, 12, tetraazapentacenes (L5H2 or DH, Series resistance, Ideality factor, Barrier height,

چکیده مقاله :

AbstractThe current–voltage (I–V) characteristics of Aluminium/5,14-dihydro-5,7,12,14-tetraazapentacenes (L5H2 or DHTAPs) doped surface-type structures were investigated in air at ambient temperature and moisture. The conventional forward bias I–V method, Semi-logarithm, Cheung functions and modified Norde’s function were used to extract the diode parameters including ideality factor, series resistance and barrier height. The parameter values obtained from these four different methods were found in good agreement.