The Impact of Structural Parameters on the Performance of Nanoscale DG-SOI MOSFETs in Sub threshold Region
الموضوعات :فاطمه کهنی 1 , حامد نعمتیان 2 , مرتضی فتحی پور 3
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الکلمات المفتاحية: DG-SOI MOSFETs, Fringe Capacitance, Electrical Characteristics, Nanoscale Devices, Sub Threshold Region,
ملخص المقالة :
This paper is intended to investigate the impact of structural parameters (in particular: body thickness (TBody ), Source/Drain Length (LS /LD ) and gate oxide thickness (TOX )) on the electrical characteristics of nanoscale Double Gate SOI MOSFET (DG SOI MOSFET) in subthreshold regime. It will be shown that a reduction in Ls /Ld doesn't have a profound effect on both on-current and Drain Induced Barrier Lowering Effect (DIBL); however it increases the effective Gate Capacitance (CGeff ) significantly. A decrease in Tbody results in an increase in CGeff and a decrease in potential barrier height while ION is reduced. This investigation also proves that as TOX is increased, CGeff is decreased. A decline in TOX reduces ION while it drastically increases ION /IOFF ratio.
