On Increasing of Integration Rate of Elements of a Current Source Circuit

الموضوعات : فصلنامه ریاضی

Evgeny L. Pankratov ¹ (Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod, 603950, Russia)

تاريخ الإرسال : 11 الخميس , ربيع الثاني, 1442 تاريخ التأكيد : 24 الجمعة , جمادى الأولى, 1442 تاريخ الإصدار : 17 الإثنين , رجب, 1442

الکلمات المفتاحية: optimization of manufacturing, analytical approach for modelling, Current source circuit,

ملخص المقالة :

In this paper we introduce an approach to increase integration rate of elements of a current source circuit. Framework the approach we consider a hetero-structure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.