بررسی اثر آلایش ایندیوم بر خواص ساختاری و نوری لایههای نازک سولفید قلع تهیه شده با روش الکتروانباشت
الموضوعات : فصلنامه علمی - پژوهشی مواد نوین
1 - گروه مهندسی مواد، واحد اهواز، دانشگاه آزاد اسلامی، اهواز، ایران
2 - گروه مهندسی مواد، واحد اهواز، دانشگاه آزاد اسلامی، اهواز، ایران
الکلمات المفتاحية: سولفید قلع, خواص نوری, رسوب الکتروشیمیایی, لایههای نازک نانوساختار, انرژی پهنای باند,
ملخص المقالة :
با استفاده از روش رسوب الکتروشیمیایی، لایههای نازک سولفید قلع (SnS) خالص و آلایش یافته با ایندیوم از یک محلول آبی تهیه شدند. دمای حمام، زمان لایهنشانی، پتانسیل انباشت لایه و pH به ترتیب ℃ 60، 30 دقیقه، V 1- و 1/2 بودند. لایههای نازک تهیه شده با استفاده از روشهای پراش پرتو X (XRD)، میکروسکوپ الکترونی عبوری (FESEM)، نورتابناکی (PL) و طیف نگاری UV-vis مشخصهیابی شدند. الگوهای XRD نشان دادند که آلایش ایندیوم، منجر به کاهش کیفیت بلوری و ریزتر شدن اندازه بلورها میگردد. تصاویر FESEM نشان دادند که مورفولوژی لایههای نازک دانه-شکل بوده و ساختارهایی در مقیاس میکرو/نانومتری وجود داشت. نتیجه آزمایش فوتولومینوساناس (PL) نشان داد که در اثر آلایش ایندیوم یک قله نشری جدیدی در محدوده نشر نور نارنجی ایجاد میشود. آنالیز طیف نگاری UV-vis نشان داد که ویژگی جذب نور لایههای نازک SnS پس از آلایش ایندیوم بهبود یافته و انرژی پهنای باند لایههای SnS خالص از eV 45/1 به eV 40/1 کاهش یافت. بنابراین، کلیه نتایج نشاندهنده نقش کلیدی آلاینده ایندیوم بر خواص ساختاری و نوری لایههای نازک SnS است.
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