Analysis of Kirk Effect in Nanoscale Quantum Well Heterojunction Bipolar Transistor Laser
الموضوعات : فصلنامه نانوساختارهای اپتوالکترونیکی
ashkan horri
1
(Department of Electrical Engineering, Arak Branch, Islamic Azad University Arak, Iran)
Seyedeh Zahra Mirmoeini
2
(Department of Electrical Engineering, Arak Branch, Islamic Azad University Arak, Iran)
الکلمات المفتاحية: Quantum well, Heterojunction Bipolar Transistor lasers (HBTLs), Kirk Effect, Saturation Velocity,
ملخص المقالة :
In this paper, we present an analytical model to analysis the kirk effect on
static and dynamic responses of quantum well heterojunction bipolar transistor lasers
(HBTLs). Our analysis is based on solving the kirk current equation, continuity
equation and rate equations of HBTL. We compare the performance (current gain,
output photon number and small signal modulation bandwidth) of the transistor laser
with different levels of the kirk current. We show that, at high collector currents, the
static and small signal behavior of HBTL depend on kirk current level. The results
indicate that, the level of kirk current affect current gain, output photon number and
modulation bandwidth From simulation results, it can befound that, kirk effect has
destructive influence on HBTL performance. It was found that lower modulation
bandwidth and lower current gain occurs at lower kirk current level. For increasing kirk
current, the high collector-base voltage and high collector length was proposed.
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