Impact of p-type semiconductor substrate on the transient response of metal-semiconductor-metal photodetector
الموضوعات : Journal of Theoretical and Applied Physics
Ali Barkhordari
1
(Faculty of Physics, Shahid Bahonar University of Kerman, Kerman, Iran)
Hamid Mashayekhi
2
(Faculty of Physics, Shahid Bahonar University of Kerman, Kerman, Iran)
Şemsettin Altındal
3
(Department of Physics, Faculty of Sciences, Gazi University, Ankara, Turkey)
Süleyman Özçelik
4
(Department of Photonics, Faculty of Applied Sciences, Gazi University, Ankara, Turkey|Photonics Application and Research Center, Gazi University, Ankara, Turkey)
Yashar Azizian-Kalandaragh
5
(Photonics Application and Research Center, Gazi University, Ankara, Turkey|Department of Physics, University of Mohaghegh Ardabili, Ardabil, Iran)
الکلمات المفتاحية: p-type layer, Continuity and Poisson’ s Equations, MSM Photodetector, Finite difference Method, Numerical Solution,
ملخص المقالة :
In this paper, using finite difference method, the effect of adding a p-layer at the back of a metal-semiconductor-metal (MSM) photodetector (PD) on the spatial electric charge distribution and the transient response of the device is numerically studied. To this aim, the fundamental equations of the semiconductor device, i.e., two current continuity time-dependent equations have been considered coupled with Poisson's equation. The I-V curve of the MSM photodetector is obtained as the main characteristics of each semiconductor device. Moreover, the variations of electrostatic potential, electron and hole concentrations are determined in the MSM photodetector with a p-layer at the back of the active layer. It is observed that the peak transient response of an MSM device is improved by back-gating the device as more electrons are injected to the semiconductor layer and the slower charge carriers (the holes) to be removed from the top circuit.
