Quantum analytical modeling and simulation of CNT on insulator (COI) and CNT on nothing (CON) FET: a comparative analysis

الموضوعات : Journal of Theoretical and Applied Physics

Sudipta Mukherjee ¹ (Department of E.T.C.E, Jadavpur University)
Dipan Bandyopadhyay ² (Department of E.T.C.E, Jadavpur University)
Pranab Kishore Dutta ³ (Department of E.T.C.E, Jadavpur University)
Subir Kumar Sarkar ⁴ (Department of E.T.C.E, Jadavpur University)

تاريخ الإصدار : 25 الأربعاء , شعبان, 1437

الکلمات المفتاحية: ATLAS 2D simulator, CNT, COI/CON, High, k dielectric, Inversion charge, Quantum threshold voltage,

ملخص المقالة :

AbstractA comprehensive performance analysis by quantum analytical modeling of CNT on insulator (COI) and CNT on nothing (CON) FET having channel length 20 nm has been proposed and investigated on the basis of 2D Poisson’s Equation and solution of 1-D Schrodinger’s Equation and validated using ATLAS 2D simulator. As classical approximations fail to describe carrier quantization, charge inversion and potential profile of a device at sub-100 nm regime, here for the first time an analytical model in quantum mechanical aspect for COI/CON devices has been derived. Effects of high-k dielectrics in place of conventional SiO2 over the device characteristics have been thoroughly discussed. Moreover, all noticeable benefits of our device to the so called SOI/SON architecture have also been vividly justified.