فهرس المقالات BTBT حرية الوصول المقاله صفحة الملخص نص كامل 1 - An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar, Off and ON states Ali Heydari Seyed Ali Sedigh Ziabari Fayzollah Khorramrouz 10.22034/jna.2020.1881749.1166 حرية الوصول المقاله صفحة الملخص نص كامل 2 - An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar Off and ON states Fayzollah Khorramrouz Seyed Ali Sedigh Ziabari Ali Heydari 10.22034/jna.2021.685452 حرية الوصول المقاله صفحة الملخص نص كامل 3 - An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar, Off and ON states Fayzollah Khorramrouz Seyed Ali Sedigh Ziabari Ali Heydari 10.22034/jna.2020.680049 حرية الوصول المقاله صفحة الملخص نص كامل 4 - Effects of the Channel Length on the Nanoscale Field Effect Diode Performance arash rezaei Bahram Azizollah-Ganji Morteza Gholipour حرية الوصول المقاله صفحة الملخص نص كامل 5 - Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension Morteza Rahimian 10.30495/jopn.2023.31255.1274 حرية الوصول المقاله صفحة الملخص نص كامل 6 - Voltage Difference Technique in Junctionless Tunneling FET for Suppression of Ambipolar Conduction Morteza Rahimian 10.30495/jopn.2023.32088.1294
