Effects on selective epitaxial growth of strained-SiGe p-MOSFETs on various (001) Si recess structures
Subject Areas : Journal of Theoretical and Applied Physics
Min-Hao Hong
1
(Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University)
Dung-Ching Perng
2
(Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University)
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Abstract :