Effects on selective epitaxial growth of strained-SiGe p-MOSFETs on various (001) Si recess structures

Hong, Min-Hao; Perng, Dung-Ching

doi:10.1007/s40094-018-0272-5

Journal of Theoretical and Applied Physics

Issue 4 Vol. 0 Autumn 2017

Submit Your Paper
Review for this publication

PDF XML

Downloads : 16

Export Article
- BibTex
- EndNote
- RIS
- ISI
- APA
- MLA
- HARVARD
- VANCOUVER
- Mendeley
- HTML
Related Links
- Google Scholar
More by Authors Link
- DOAJ
  - Min-Hao Hong
  - Dung-Ching Perng
- Google Scholar
  - Min-Hao Hong
  - Dung-Ching Perng
- PubMed
  - Min-Hao Hong
  - Dung-Ching Perng

Share To

Article Url

Manuscript ID : 18645 Visit : 55 Page: 313 - 317

10.1007/s40094-018-0272-5

Article Type: Original Research

Effects on selective epitaxial growth of strained-SiGe p-MOSFETs on various (001) Si recess structures

Subject Areas : Journal of Theoretical and Applied Physics

Min-Hao Hong ¹ (Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University)
Dung-Ching Perng ² (Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University)

Published : 2017-12-01

Keywords:

Abstract :

References:

Share To

Article Url

Effects on selective epitaxial growth of strained-SiGe p-MOSFETs on various (001) Si recess structures

Sanad

Links

Related Centers

Technical Support

Official pages