طراحي و شبيه سازي تقويت كننده ترارسانايي عملياتي دو طبقه كلاس AB با بهره DC بالا
شهربانو قربانزاده
1
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گروه برق الكترونيك، واحد علي آباد كتول، دانشگاه آزاد اسلامي ، علي آباد كتول، ايران
)
کلید واژه: بهره DC, تقویت کننده ترارسانایی عملیاتی, پهنای باند بهره واحد, ضرایب شایستگی, نویز ارجاعی ورودی,
چکیده مقاله :
در این مقاله، یک مدار تقویت کننده ترارسانایی عملیاتی جدید دو طبقه کلاسAB پیشنهاد میشود. با افزایش هدایت انتقالی ترانزیستورهای ورودی، بهره تقویت کننده عملیاتی بهبود مییابد و از طرفی نویز ارجاعی ورودی کاهش مییابد. آینه های جریان غیر خطی برای بهبود نرخ چرخش استفاده شده است. با استفاده از این منابع جریان غیرخطی، برای سیگنال ورودی با دامنه زیاد میزان جریان خروجی متناسب با توان چهارم سیگنال ورودی افزایش مییابد. بنابراین با استفاده از این ساختار نرخ چرخش تقویتکننده عملیاتی بهبود مییابد. جبران-سازی در روش پیشنهادی به صورت هیبرید کاسکود انجام میشود که سابقا برای ساختار دوطبقه ارائه شده است. با استفاده از ساختار پیشنهادی، پارامترهای دیگر تقویتکننده نظیر پهنای باند بهره واحد و پایداری خراب نمیشوند.. نتایج شبیه سازی در فناوری 18/0 میکرومتر و با ولتاژ تغذیه 8/1 ولت در گوشه های دمایی و فناوری ساخت با استفاده از نرم افزار كيدنس انجام شده است. نتایج شبیهسازی بیانگر عملکرد بهتر تقویتکننده عملیاتی پیشنهادی نسبت به ساختارهای موجود است. مقدار بهره DC مدار پیشنهادی بعد از شبیهسازی پساجانمایی برابر 5/93 دسیبل است. برای این منظور از ضرایب شایستگی نیز جهت مقایسه استفاده شده است
چکیده انگلیسی :
In this paper, a new two-stage class AB operational transconductance amplifier circuit is proposed. By increasing the transconductance of the input transistors, the gain of the operational amplifier is improved and on the other hand, the reference noise of the input is reduced. Non-linear current mirrors have been used to improve the slew rate. By using these non-linear current sources, for an input signal with a large amplitude, the amount of output current increases proportionally to the fourth power of the input signal. Therefore, by using this structure, the slew rate of the operational amplifier is improved. In the proposed method, compensation is done in the form of a hybrid cascode, which was previously presented for a two-story structure. By using the proposed structure, other amplifier parameters such as unit gain bandwidth and stability are not damaged. The simulation results have been done in 0.18 micrometer technology and with 1.8V supply voltage in temperature corners and manufacturing technology using Cadence software. The simulation results show the better performance of the proposed operational amplifier compared to the existing structures. The value of DC gain of the proposed circuit after the post-placement simulation is equal to 93.5 dB. For this purpose, merit coefficients have also been used for comparison 1.8V supply voltage
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