Device and Circuit Performance Simulation of a New Nano- Scaled Side Contacted Field Effect Diode Structure
محورهای موضوعی : فصلنامه نانوساختارهای اپتوالکترونیکیOmid Talati Khoei 1 , Reza Hosseini 2
1 - Department of Electrical Engineering, Khoy Branch, Islamic Azad
University, Khoy, Iran
2 - Department of Electrical Engineering, Khoy Branch, Islamic Azad
University, Khoy, Iran
کلید واژه: On-State, Off-State, Logic Gates, Propagation Delay, Static Power Dissipation, Power Delay Product,
چکیده مقاله :
A new side-contacted field effect diode (S-FED) structure has been
introduced as a modified S-FED, which is composed of a diode and planar double gate
MOSFET. In this paper, drain current of modified and conventional S-FEDs were
investigated in on-state and off-state. For the conventional S-FED, the potential barrier
height between the source and the channel is observed to become larger and the flow of
injected electrons is reduced. Thus, the drain current decreases in on-state. While in offstate,
the potential barrier height and width become smaller in conventional S-FED and
so the drain current is greater than that of modified structure. Mixed mode simulations
were used to determine the performance of the proposed logic gates. We compared the
operation of modified S-FED with that of conventional S-FED. Simulated power delay
product (PDP) of the modified S-FED-based NOR, NAND, XOR gates were found to
be about 416fJ, 408fJ and 336fJ, respectively, compared with 906fJ, 810fJ and 705fJ
achievable with conventional S-FED logic gates.
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NOR
NAND
XOR
Power Dissipation [nW]
260
240
224
Propagation Delay [ps]
1.6
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1.5
Power Delay Product[fJ]
416
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336
NOR
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Power Dissipation [nW]
195
180
168
Propagation Delay [ps]
4.65
4.5
4.2
Power Delay Product[fJ]
906
810
705
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