Temperature dependence of resistivity of RFeAsO compounds

محورهای موضوعی : Journal of Theoretical and Applied Physics

S. Mukherjee ¹ , Papri Dasgupta ² , Asok Poddar ³ , Chandan Mazumdar ⁴

1 - Department of Physics, The University of Burdwan
2 - Saha Institute of Nuclear Physics
3 - Saha Institute of Nuclear Physics
4 - Saha Institute of Nuclear Physics

تاریخ انتشار : 1395/03/12

کلید واژه: Oxypnictides, resistivity, transport, Weak localization,

چکیده مقاله :

AbstractThe resistivity (ρ) data for RFeAsO compounds (R = Ce, Pr, Nd, Sm), in the temperature (T) range 35–315 K have been analyzed to identify the dominant scattering mechanisms. Close to the room temperature, the system appears to be a metal with low electron density, and the electron–phonon scattering is the dominant one. At lower temperatures, electron–electron scattering plays an important role. In an intermediate temperature region, unlike metallic system, dρ/dT is negative; and ρ−1 varies as ln T as in a state of weak localization. We look into the origin of negative dρ/dT. The analysis of ρ(T) data below the SDW transition temperature shows the presence of electron–electron interaction in addition to a SDW energy gap, and also gives an estimate of the SDW energy gap.