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    1 - Observation of Raman Gain in Reduced Length of Bismuth Erbium Doped Fiber
    Journal of Optoelectronical Nanostructures , Issue 4 , Year , Autumn 2020
    Raman amplification of a 49 cm Bismuth oxide (Bi2O3) as a nonlinear gain
    medium based erbium doped fiber amplifier (EDFA) is reported in new and compact
    design in near infrared spectral regions. The bismuth glass host provides the
    opportunity to be doped More
    Raman amplification of a 49 cm Bismuth oxide (Bi2O3) as a nonlinear gain
    medium based erbium doped fiber amplifier (EDFA) is reported in new and compact
    design in near infrared spectral regions. The bismuth glass host provides the
    opportunity to be doped heavily with erbium ions to allow a compact optical gain fiber
    amplifier design by using reduced fiber length and the 1480 nm low pump power
    around 150 mW. A extended Raman amplification bandwidth of 45 nm, from 1520-
    1565 nm (C-band window) wavelengths is empirically proposed in a backward and
    dualwavelength pumped Bi-EDF by employing 350 mW Raman pump in 1440 nm.
    Because of the short length gain medium as a nonlinear Bi-EDF, amplification of 3 dB
    is achieved over a C-band wavelength range. This simple C-band Raman amplifier
    based Brillouin and ASE backscattering was constructed to test the forward, backward
    and dual-wavelength pump laser and on-off gain. A peak gain of 1.53 dB was obtained
    with a 3-dB bandwidth of 45 nm that the varieties of gain is 2.02 dB around 1545 nm in
    backward pumping design. It array will be employ for sensing, spectroscopy and
    telecommunication systems. Manuscript profile